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CMOS STATIC RAM 16K (4K x 4-BIT)
Integrated Device Technology, Inc.
IDT6168SA IDT6168LA
FEATURES:
* High-speed (equal access and cycle time) -- Military: 15/20/25/35/45ns (max.) -- Commercial: 15/20/25/35ns (max.) * Low power consumption * Battery backup operation--2V data retention voltage (IDT6168LA only) * Available in high-density 20-pin ceramic or plastic DIP, 20pin SOIC. * Produced with advanced CMOS high-performance technology * CMOS process virtually eliminates alpha particle soft-error rates * Bidirectional data input and output * Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques,
provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1W operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP, 20-pin SOIC providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A0 VCC GND ADDRESS DECODER 16,384-BIT MEMORY ARRAY
A11
I/O0 I/O1 I/O2 I/O3
I/O CONTROL INPUT DATA CONTROL
CS WE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
3090 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGE
(c)1996 Integrated Device Technology, Inc. For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
MAY 1996
3090/2
5.3
1
IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
TRUTH TABLE(1)
Mode Standby
CS
H L L
WE
X H L
Output High-Z DOUT DIN
Power Standby Active Active
3090 tbl 03
A0 A1 A2 A3 A4 A5 A6
1 2 3 4 5 6 7 8 9 10
20 19 18
VCC A11 A10 A9 A8 I/O3 I/O2 I/O1 I/O0
Read Write
P20-1, D20-1, & SO20-2
NOTE: 1. H = VIH, L = VIL, X = Don't Care
17 16 15 14 13 12 11
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM Rating Com'l. Mil. -0.5 to +7.0 Unit V Terminal Voltage -0.5 to +7.0 with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature Power Dissipation DC Output Current 0 to +70 -55 to +125 -55 to +125 1.0 50
CS
GND
A7
WE
3090 drw 02
TA TBIAS TSTG PT IOUT
-55 to +125 -65 to +135 -65 to +150 1.0 50
C C C W mA
DIP/SOJ TOP VIEW
PIN DESCRIPTIONS
Name A0-A11 Description Address Inputs Chip Select Write Enable Data Input/Output Power Ground
3090 tbl 01
NOTE: 3090 tbl 04 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CS WE
I/O0-3 VCC GND
RECOMMENDED DC OPERATING CONDITIONS
Symbol VCC GND VIH VIL Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min. Typ. 4.5 5.0 0 0 2.2 -- -0.5(1) -- Max. 5.5 0 6.0 0.8 Unit V V V V
CAPACITANCE (TA = +25C, F = 1.0MHZ)
Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 7 7 Unit pF pF
NOTE: 3090 tbl 05 1. VIL (min.) = -3.0V for pulse width less than 20ns, once per cycle.
NOTE: 3090 tbl 02 1. This parameter is determined by device characterization, but is not production tested.
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade Military Commercial Temperature -55C to +125C 0C to +70C GND 0V 0V VCC 5V 10% 5V 10%
3090 tbl 06
5.3
2
IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS(1)
(VCC = 5.0V 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6168SA15 Symbol ICC1 Parameter Operating Power Supply Current CS VIL, Outputs Open, VCC = Max., f = 0(2) Dynamic Operating Current CS VIL, Outputs Open, VCC = Max., f = fMAX(2) Standby Power Supply Current (TTL Level) CS VIH, VCC = Max., Outputs Open, f = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS VHC, VCC = Max., VIN VHC or VIN VLC, f = 0(2) Power Com'l. Mil. SA LA SA LA SA LA SA LA 110 -- 145 -- 55 -- 20 -- 120 -- 165 -- 60 -- 20 -- 6168SA20 6168LA20 Com'l. 90 70 120 100 45 30 20 0.5 Mil. 100 80 120 110 45 35 20 5
3090 tbl 07
Unit mA
ICC2
mA
ISB
mA
ISB1
mA
DC ELECTRICAL CHARACTERISTICS
(CONTINUED)(1)
6168SA25 6168LA25 6168SA35 6168LA35 Com'l. 90 70 100 80 30 20 3 0.5 Mil. -- -- -- -- -- -- -- -- 6168SA45 6168LA45 Com'l. -- -- -- -- -- -- -- -- Mil. 100 80 110 80 35 25 10 0.3
3090 tbl 08
(VCC = 5.0V 10%, VLC = 0.2V, VHC = VCC - 0.2V)
Symbol ICC1
Parameter Operating Power Supply Current CS VIL, Outputs Open, VCC = Max., f = 0(2) Dynamic Operating Current CS VIL, Outputs Open, VCC = Max., f = fMAX(2) Standby Power Supply Current (TTL Level) CS VIH, VCC = Max., Outputs Open, f = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS VHC, VCC = Max., VIN VHC or VIN VLC, f = 0(2)
Power Com'l. SA LA SA LA SA LA SA LA 90 70 110 90 35 25 3 0.5
Mil. 100 80 120 100 45 30 10 0.3
Unit mA
ICC2
mA
ISB
mA
ISB1
mA
NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.
DC ELECTRICAL CHARACTERISTICS VCC = 5.0V 10%
Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Test Condition VCC = Max., VIN = GND to VCC MIL COM'L MIL COM'L IDT6168SA Min. Max. -- -- -- -- -- -- 2.4 10 2 10 2 0.5 0.4 -- IDT6168LA Min. Max. -- -- -- -- -- -- 2.4 5 2 5 2 0.5 0.4 -- V
3090 tbl 09
Unit A A V
Output Leakage Current VCC = Max., CS = VIH, VOUT = GND to VCC Output LOW Voltage Output HIGH Voltage IOL = 10mA, VCC = Min. IOL = 8mA, VCC = Min. IOH = -4mA, VCC = Min.
5.3
3
IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA RETENTION CHARACTERISTICS (LA Version Only)
VLC = 0.2V, VHC = VCC - 0.2V
Symbol VDR ICCDR Parameter VCC for Data Retention Data Retention Current Test Condition MIL. COM'L. Min. 2.0 -- -- -- -- 0 tRC(2) IDT6168LA Typ.(1) -- 0.5(2) 1.0(3) 0.5(2) 1.0(3) -- -- Max. -- 100(2) 150(3) 20(2) 30(3) -- -- Unit V A A ns ns
3090 tbl 10
CS VHC
VIN VHC or VLC tCDR(5) tR(5) Chip Deselect to Data Retention Time Operation Recovery Time
NOTES: 1. TA = +25C. 2. at VCC = 2V 3. at VCC = 3V 4. tRC = Read Cycle Time. 5. This parameter is guaranteed by device characterization, but is not production tested.
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE VCC tCDR 4.5V VDR 2V VIH VDR VIH
3090 drw 03
4.5V tR
CS
AC TEST CONDITIONS
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load GND to 3.0V 5ns 1.5V 1.5V See Figures 1 and 2
3090 tbl 11
5V
5V
480 DATAOUT 255 30pF*
480 DATAOUT 255 5pF*
3090 drw 04
3090 drw 05
Figure 1. AC Test Load *Includes scope and jig capacitances
Figure 2. AC Test Load (for tCHZ, tCLZ, tWHZ and tOW)
5.3
4
IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (CONTINUED) (VCC = 5.0V 10%, All Temperature Ranges)
6168SA15 6168SA20/25 6168LA20/25 6168SA35 6168LA35 6168SA45(1) 6168LA45(1)
Symbol Read Cycle tRC tAA tACS tCLZ(2) tCHZ(2) tOH tPU(2) tPD(2)
Parameter Read Cycle Time Address Access Time Chip Select Access Time Chip Select to Output in Low-Z Chip Deselect to Output in High-Z Output Hold from Address Change Chip Select to Power-Up Time Chip Deselect to Power-Down Time
Min. 15 -- -- 3 -- 3 0 --
Max. -- 15 15 -- 8 -- -- 35
Min. 20/25 -- -- 5 -- 3 0 --
Max. -- 20/25 20/25 -- 10 -- -- 20/25
Min. 35 -- -- 5 -- 3 0 --
Max. -- 35 35 -- 15 -- -- 35
Min. 45 -- -- 5 -- 3 0 --
Max. -- 45 45 -- 25 -- -- 40
Unit ns ns ns ns ns ns ns ns
3090 tbl 12
NOTES: 1. -55C to +125C temperature range only. 2. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested.
TIMING WAVEFORM OF READ CYCLE NO. 1(1, 2)
tRC
ADDRESS tAA tOH DATAOUT PREVIOUS DATA VALID DATA VALID
3090 drw 06
TIMING WAVEFORM OF READ CYCLE NO. 2(1, 3)
tRC
CS
tCLZ DATAOUT
(4)
tACS
tCHZ DATAOUT VALID
(3)
HIGH IMPEDANCE tPU
HIGH IMPEDANCE
VCC
SUPPLY CURRENT
ICC ISB
tPD
3090 drw 07
NOTES: 1. WE is HIGH for Read cycle. 2. CS is LOW for Read cycle. 3. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. Transition is measured 200mV from steady state.
5.3
5
IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (CONTINUED) (VCC = 5.0V 10%, All Temperature Ranges)
6168SA15 Symbol Write Cycle tWC tCW tAW tAS tWP tWR tDW tDH tWHZ(3) tOW(3) Write Cycle Time Chip Select to End-of-Write Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time DataValid to End-of-Write Data Hold Time Write Enable to Output in High-Z Output Active from End-of-Write 15 15 15 0 15 0 9 0 -- 0 -- -- -- -- -- -- -- -- 6 -- 20 20 20 0 20 0 10 0 -- 0 -- -- -- -- -- -- -- -- 7 -- 30 30 30 0 30 0 15 0 -- 0 -- -- -- -- -- -- -- -- 13 -- 40 40 40 0 40 0 20 3 -- 0 -- -- -- -- -- -- -- -- 20 -- ns ns ns ns ns ns ns ns ns ns
3090 tbl 13
6168SA20/25 6168LA20/25 Min. Max.
6168SA35 6168LA35 Min. Max.
6168SA45(2) 6168LA452) Min. Max. Unit
Parameter
Min.
Max.
NOTES: 1. 0 to +70C temperature range only. 2. -55C to +125C temperature range only. 3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED TIMING)(1, 2, 5) WE
t WC ADDRESS t AW
CS
t AS tWP t WR
(3)
WE
t WHZ (6) DATAOUT PREVIOUS DATA VALID
(4)
tOW (6) t DW t DH
t CHZ DATA VALID (4)
(6)
DATAIN
DATA VALID
3090 drw 08
5.3
6
IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CS CONTROLLED TIMING)(1, 2, CS
t WC ADDRESS t AW
5)
CS
tAS t CW tWR
(3)
WE
t DW DATAIN DATA VALID
3090 drw 09
t DH
NOTES: 1. WE or CS must be HIGH during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, the I/O pins are in the output state and input signals should not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state. 6. Transition is measured 200mV from steady state.
ORDERING INFORMATION
IDT 6168 Device Type XX Power XXX Speed XX Package X Process/ Temperature Range Blank B Commercial (0C to +70C) Military (-55C to +125C) Compliant to MIL-STD-883, Class B
P D SO
300mil Plastic DIP (P20-1) 300mil Ceramic DIP (D20-1) 300mil Small Outline IC, Gull Wing (SO20-2)
15 20 25 35 45
Speed in nanoseconds Military Only
SA LA
Standard Power Low Power
3090 drw 10
5.3
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